?
Semiconductor Components Industries, LLC, 2006
July, 2006 ? Rev. 4
1
Publication Order Number:
MUR260/D
MUR260
Preferred Device
SWITCHMODE
Power Rectifier
These state?of?the?art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
?
Ultrafast 50 Nanosecond Recovery Times
?
175°C Operating Junction Temperature
?
Low Forward Voltage
?
Low Leakage Current
?
High Temperature Glass Passivated Junction
?
These are Pb?Free Devices*
Mechanical Characteristics:
?
Case: Epoxy, Molded
?
Weight: 0.4 Gram (Approximately)
?
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
?
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
?
Shipped in Plastic Bags; 1,000 per Bag
?
Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to
the Part Number
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
VR
600
?
V
Average Rectified Forward Current (Note 1)
(Square Wave Mounting Method #3 Per Note 3)
IF(AV)
2.0 @
TA
= 60
°C
A
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
IFSM
35
A
Operating Junction Temperature and Storage
Temperature Range
TJ, Tstg
?65 to
+175
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Value
Unit
Maximum Thermal Resistance,
Junction?to?Ambient
RJA
See
Note 3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤
2.0%.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ULTRAFAST RECTIFIER
2.0 AMPERES, 600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
PLASTIC
AXIAL LEAD
CASE 59
MARKING DIAGRAM
**This package is inherently Pb?Free.
A = Assembly Location
Y = Year
WW = Work Week
= Pb?Free Package
(Note: Microdot may be in either location)
A
MUR260
YYWW
Device Package Shipping?
ORDERING INFORMATION
MUR260RL Axial Lead** 5000/Tape & Reel
MUR260 Axial Lead** 1000 Units/Bag
MUR260G Axial Lead** 1000 Units/Bag
MUR260RLG Axial Lead** 5000/Tape & Reel
相关PDF资料
MUR440-E3/54 DIODE 4A 400V 50NS UF
MUR440RLG DIODE ULTR FAST 4A 400V DO-201AD
MUR450PFRLG DIODE ULTR FAST 4A 520V DO-201AD
MUR480ERL DIODE ULTR FAST 4A 800V DO-201AD
MUR490E DIODE ULTR FAST 4A 900V DO-201AD
MUR805 DIODE ULTRA FAST 8A 50V TO-220AC
MUR8100E DIODE UFAST 1000V 8A TO-220AC
MUR860 DIODE ULTRAFAST 8A 600V TO-220AC
相关代理商/技术参数
MUR260S 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:GLASS PASSIVATED JUNCTION Ultra fast Plastic Rectifiers VOLTAGE: 600V CURRENT:2.0A
MUR280 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:GLASS PASSIVATED JUNCTION Ultra fast Plastic Rectifiers VOLTAGE: 800V CURRENT:2.0A
MUR280S 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:GLASS PASSIVATED JUNCTION Ultra fast Plastic Rectifiers VOLTAGE: 800V CURRENT:2.0A
MUR2960S 制造商:SIRECTIFIER 制造商全称:Sirectifier Semiconductors 功能描述:快速恢复二极管Fast Recovery Diodes,超快恢复二极管Ultra Fast Recovery Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。
MUR2X030A02 功能描述:DIODE GEN PURP 200V 60A SOT227 制造商:genesic semiconductor 系列:- 包装:散装 零件状态:有效 二极管配置:2 个独立式 二极管类型:标准 电压 - DC 反向(Vr)(最大值):200V 电流 - 平均整流(Io)(每二极管):60A 不同 If 时的电压 - 正向(Vf):1V @ 30A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):60ns 不同?Vr 时的电流 - 反向漏电流:25μA @ 200V 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商器件封装:SOT-227 标准包装:10
MUR2X030A06 功能描述:DIODE GEN PURP 600V 60A SOT227 制造商:genesic semiconductor 系列:- 包装:散装 零件状态:有效 二极管配置:2 个独立式 二极管类型:标准 电压 - DC 反向(Vr)(最大值):600V 电流 - 平均整流(Io)(每二极管):60A 不同 If 时的电压 - 正向(Vf):1.5V @ 30A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):60ns 不同?Vr 时的电流 - 反向漏电流:25μA @ 600V 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商器件封装:SOT-227 标准包装:10
MUR2X030A10 功能描述:DIODE GEN PURP 1000V 60A SOT227 制造商:genesic semiconductor 系列:- 包装:散装 零件状态:有效 二极管配置:2 个独立式 二极管类型:标准 电压 - DC 反向(Vr)(最大值):1000V(1kV) 电流 - 平均整流(Io)(每二极管):60A 不同 If 时的电压 - 正向(Vf):2.35V @ 30A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):85ns 不同?Vr 时的电流 - 反向漏电流:25μA @ 1000V 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商器件封装:SOT-227 标准包装:10
MUR2X030A12 功能描述:DIODE GEN PURP 1200V 60A SOT227 制造商:genesic semiconductor 系列:- 包装:散装 零件状态:有效 二极管配置:2 个独立式 二极管类型:标准 电压 - DC 反向(Vr)(最大值):1200V(1.2kV) 电流 - 平均整流(Io)(每二极管):60A 不同 If 时的电压 - 正向(Vf):2.35V @ 30A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):85ns 不同?Vr 时的电流 - 反向漏电流:25μA @ 1200V 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商器件封装:SOT-227 标准包装:10